2.1-2.2 GHz 40W High Efficiency Doherty PA for LTE 4G Applications
Supervisor : External Project
Team size: Minimum , Maximum
| CSE | SE | Comm | Biomed | EE | Aero | Special |
|---|---|---|---|---|---|---|
| Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Description
A Doherty amplifier using one MACOM WGC22630 GAN device.
- The amplifier will be capable of producing a peak power of 59dBm
- The amplifier will operate across Band 66, 2110-2200 MHz
- Using a driver amplifier to excite the Doherty (not part of design)
- The design will be first done in simulation using a transistor model, then a load pull fixture will be designed and built to characterize the transistor and the Doherty will be re-designed using measured transistor data
- Measurements/tests involved include: Load pull, Pulsed continuous wave and Modulated signal tests
Ericsson Supervisor: Igor Acimovic SYST Supervisor: John Lambadaris DOE Supervisor: Rony E. Amaya